Magnetoresistance after initial demagnetization in La0.67 Sr0.33 Mn O3 SrTi O3 La0.67 Sr0.33 Mn O3 magnetic tunnel junctions

E. T. Wertz, Qi Li

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Magnetic tunnel junctions were fabricated from La0.67 Sr0.33 Mn O3 (LSMO) SrTi O3 La0.67 Sr0.33 Mn O3 heterostructures. Junctions initially demagnetized at 5 K with an in-plane magnetic field showed larger tunneling magnetoresistance (TMR) and sharper switching than standard TMR scans. Magnetoresistive switching from the demagnetized state was stable in fields <80 G yielding a TMR of 475% and a ΔMRΔH≈200%G. Changes in resistance achievable at <500 G yielded a TMR of ≈850%. A similar TMR was seen when rotating the magnetic field from an in-plane to out-of-plane orientation. The demagnetized high resistance state may indicate that the LSMO layers preferentially choose a more efficient opposite magnetic domain alignment.

Original languageEnglish (US)
Article number142506
JournalApplied Physics Letters
Volume90
Issue number14
DOIs
StatePublished - Apr 13 2007

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demagnetization
tunnel junctions
high resistance
magnetic domains
magnetic fields
alignment

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Magnetoresistance after initial demagnetization in La0.67 Sr0.33 Mn O3 SrTi O3 La0.67 Sr0.33 Mn O3 magnetic tunnel junctions",
abstract = "Magnetic tunnel junctions were fabricated from La0.67 Sr0.33 Mn O3 (LSMO) SrTi O3 La0.67 Sr0.33 Mn O3 heterostructures. Junctions initially demagnetized at 5 K with an in-plane magnetic field showed larger tunneling magnetoresistance (TMR) and sharper switching than standard TMR scans. Magnetoresistive switching from the demagnetized state was stable in fields <80 G yielding a TMR of 475{\%} and a ΔMRΔH≈200{\%}G. Changes in resistance achievable at <500 G yielded a TMR of ≈850{\%}. A similar TMR was seen when rotating the magnetic field from an in-plane to out-of-plane orientation. The demagnetized high resistance state may indicate that the LSMO layers preferentially choose a more efficient opposite magnetic domain alignment.",
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Magnetoresistance after initial demagnetization in La0.67 Sr0.33 Mn O3 SrTi O3 La0.67 Sr0.33 Mn O3 magnetic tunnel junctions. / Wertz, E. T.; Li, Qi.

In: Applied Physics Letters, Vol. 90, No. 14, 142506, 13.04.2007.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Wertz, E. T.

AU - Li, Qi

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AB - Magnetic tunnel junctions were fabricated from La0.67 Sr0.33 Mn O3 (LSMO) SrTi O3 La0.67 Sr0.33 Mn O3 heterostructures. Junctions initially demagnetized at 5 K with an in-plane magnetic field showed larger tunneling magnetoresistance (TMR) and sharper switching than standard TMR scans. Magnetoresistive switching from the demagnetized state was stable in fields <80 G yielding a TMR of 475% and a ΔMRΔH≈200%G. Changes in resistance achievable at <500 G yielded a TMR of ≈850%. A similar TMR was seen when rotating the magnetic field from an in-plane to out-of-plane orientation. The demagnetized high resistance state may indicate that the LSMO layers preferentially choose a more efficient opposite magnetic domain alignment.

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