Magnetoresistance and Shubnikov-de Haas oscillations in layered Nb3SiTe6 thin flakes

L. An, H. Zhang, J. Hu, X. Zhu, W. Gao, J. Zhang, C. Xi, W. Ning, Z. Mao, M. Tian

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present the magnetoresistance (MR) and Hall resistivity of layered ternary Nb3SiTe6 thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov-de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of Nb3SiTe6. Furthermore, by analysis of SdH oscillations, we observed a nontrivial \Berry phase in the SdH oscillations which suggests the nontrivial topological nature of Nb3SiTe6. \ 2018 American Physical Society.
Original languageEnglish
JournalPhysical Review B
Volume97
Issue number23
DOIs
StatePublished - 2018

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flakes
oscillations
electrical resistivity
Fermi surfaces
transport properties
magnetic fields
temperature

Cite this

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title = "Magnetoresistance and Shubnikov-de Haas oscillations in layered Nb3SiTe6 thin flakes",
abstract = "We present the magnetoresistance (MR) and Hall resistivity of layered ternary Nb3SiTe6 thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov-de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of Nb3SiTe6. Furthermore, by analysis of SdH oscillations, we observed a nontrivial \Berry phase in the SdH oscillations which suggests the nontrivial topological nature of Nb3SiTe6. \ 2018 American Physical Society.",
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Magnetoresistance and Shubnikov-de Haas oscillations in layered Nb3SiTe6 thin flakes. / An, L.; Zhang, H.; Hu, J.; Zhu, X.; Gao, W.; Zhang, J.; Xi, C.; Ning, W.; Mao, Z.; Tian, M.

In: Physical Review B, Vol. 97, No. 23, 2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetoresistance and Shubnikov-de Haas oscillations in layered Nb3SiTe6 thin flakes

AU - An, L.

AU - Zhang, H.

AU - Hu, J.

AU - Zhu, X.

AU - Gao, W.

AU - Zhang, J.

AU - Xi, C.

AU - Ning, W.

AU - Mao, Z.

AU - Tian, M.

N1 - cited By 1

PY - 2018

Y1 - 2018

N2 - We present the magnetoresistance (MR) and Hall resistivity of layered ternary Nb3SiTe6 thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov-de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of Nb3SiTe6. Furthermore, by analysis of SdH oscillations, we observed a nontrivial \Berry phase in the SdH oscillations which suggests the nontrivial topological nature of Nb3SiTe6. \ 2018 American Physical Society.

AB - We present the magnetoresistance (MR) and Hall resistivity of layered ternary Nb3SiTe6 thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov-de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of Nb3SiTe6. Furthermore, by analysis of SdH oscillations, we observed a nontrivial \Berry phase in the SdH oscillations which suggests the nontrivial topological nature of Nb3SiTe6. \ 2018 American Physical Society.

U2 - 10.1103/PhysRevB.97.235133

DO - 10.1103/PhysRevB.97.235133

M3 - Article

VL - 97

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 2469-9950

IS - 23

ER -