Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition

Raj Kumar, Joseph E. Brom, Joan Marie Redwing, Frank Hunte

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Intrinsic defects in Bi2Se3 topological insulators tend to produce a high carrier concentration and current leakage through the bulk material. Bi2Se3 thin films were grown by hybrid physical chemical vapor deposition on (0001) Al2O3 substrates with high Se vapor pressure to reduce the occurrence of Se vacancies as the main type of defect. Consequently, the carrier concentration was reduced to ∼5.75 × 1018 cm-3 comparable to reported carrier concentration in Bi2Se3 thin films. Magnetotransport measurements were performed on the films and the data were analyzed for weak anti-localization using the Hikami-Larkin-Nagaoka model. The estimated α and l ø values showed good agreement with the symplectic case of 2-D transport of topological surface states in the quantum diffusion regime. The temperature and angular dependence of magnetoresistance indicate a large contribution of the 2-D surface carriers to overall transport properties of Bi2Se3 thin film.

Original languageEnglish (US)
Article number065302
JournalJournal of Applied Physics
Volume117
Issue number6
DOIs
StatePublished - Feb 14 2015

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insulators
vapor deposition
thin films
defects
vapor pressure
leakage
transport properties
occurrences
temperature dependence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Intrinsic defects in Bi2Se3 topological insulators tend to produce a high carrier concentration and current leakage through the bulk material. Bi2Se3 thin films were grown by hybrid physical chemical vapor deposition on (0001) Al2O3 substrates with high Se vapor pressure to reduce the occurrence of Se vacancies as the main type of defect. Consequently, the carrier concentration was reduced to ∼5.75 × 1018 cm-3 comparable to reported carrier concentration in Bi2Se3 thin films. Magnetotransport measurements were performed on the films and the data were analyzed for weak anti-localization using the Hikami-Larkin-Nagaoka model. The estimated α and l {\o} values showed good agreement with the symplectic case of 2-D transport of topological surface states in the quantum diffusion regime. The temperature and angular dependence of magnetoresistance indicate a large contribution of the 2-D surface carriers to overall transport properties of Bi2Se3 thin film.",
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Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition. / Kumar, Raj; Brom, Joseph E.; Redwing, Joan Marie; Hunte, Frank.

In: Journal of Applied Physics, Vol. 117, No. 6, 065302, 14.02.2015.

Research output: Contribution to journalArticle

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AU - Redwing, Joan Marie

AU - Hunte, Frank

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