Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using SiCl4

A. Mitra, C. D. Nordquist, T. N. Jackson, T. S. Mayer

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A dry etching process is described for the fabrication of through-wafer via holes in GaAs-based monolithic microwave integrated circuits by magnetron ion etching using SiCl4. The process has been used to etch via holes through 80 μm GaAs substrates with good anisotropy and etch rates exceeding 1 μm/min for via holes as small as 18×20 μm2. Etch anisotropy appears to be due to an etch-inhibiting layer, which forms on the sidewalls but can be removed readily using a brief SF6/O2 etch. The process also exhibits good selectivity to Au and Ni frontside metal.

Original languageEnglish (US)
Pages (from-to)2695-2698
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number5
StatePublished - Sep 1 1998

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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