Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption

K. Hess, Blair Richard Tuttle, F. Register, D. K. Ferry

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Abstract

Based on the energetics for hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for this effect may be considerably lower than the previously assumed value (∼3.6 eV). We support these findings further by recent experimental results related to the giant isotope effect in hydrogen related transistor degradation and the fact that degradation occurs also with relatively low supply voltages. We also show that the high threshold energy model is difficult to defend at these low voltages, even though electron-electron interactions provide a mechanism to create hot electrons with energies of ∼3.6 eV.

Original languageEnglish (US)
Pages (from-to)3147-3149
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number20
DOIs
StatePublished - Nov 15 1999

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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