Manipulating the valley pseudospin in MoS2 transistors

Kin F. Mak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monolayer MoS2 possess a new valley-pseudospin degree of freedom besides electronic charge and spin. In this talk I will talk about our recent results on optical generation of valley polarization, based on which a novel Hall effect associated with the new degree of freedom is demonstrated. The mechanisms responsible for driving the new valley Hall effect will be discussed.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationQELS - Fundamental Science, CLEO_QELS 2015
PublisherOptical Society of America (OSA)
Pages1551p
ISBN (Electronic)9781557529688
DOIs
StatePublished - May 4 2015
EventCLEO: QELS - Fundamental Science, CLEO_QELS 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameCLEO: QELS - Fundamental Science, CLEO_QELS 2015

Other

OtherCLEO: QELS - Fundamental Science, CLEO_QELS 2015
CountryUnited States
CitySan Jose
Period5/10/155/15/15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Mak, K. F. (2015). Manipulating the valley pseudospin in MoS2 transistors. In CLEO: QELS - Fundamental Science, CLEO_QELS 2015 (pp. 1551p). (CLEO: QELS - Fundamental Science, CLEO_QELS 2015). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_QELS.2015.FM3B.3