MBE growth of PbSe thin film with a 9×105 cm-2 etch-pits density on patterned (1 1 1)-oriented Si substrate

F. Zhao, J. Ma, B. Weng, D. Li, G. Bi, A. Chen, Jian Xu, Z. Shi

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

PbSe thin film was grown on a patterned Si substrate with (1 1 1)-orientation by molecular-beam epitaxy (MBE). On the mesa, a low dislocation density of 9×105 cm-2 was confirmed by the etch-pits density (EPD) wet-etching technique. The photoluminescence (PL) intensity at room temperature from the low dislocation PbSe film was much higher than that from the PbSe film grown on the planar area, which further indicated the high-quality of PbSe thin film grown on patterned Si substrate.

Original languageEnglish (US)
Pages (from-to)2695-2698
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number19
DOIs
StatePublished - Sep 15 2010

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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