Measurement of the thermal conductance of the graphene/ SiO2 interface

Kin Fai Mak, Chun Hung Lui, Tony F. Heinz

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Abstract

We have examined the interfacial thermal conductance GK of single and multilayer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average value of GK of GK = 5000 W/ cm2 K for the graphene/ SiO2 interface at room temperature. We observed significant variation in GK between individual samples, but found no systematic dependence on the thickness of the graphene layers.

Original languageEnglish (US)
Article number221904
JournalApplied Physics Letters
Volume97
Issue number22
DOIs
StatePublished - Nov 29 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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