Measurements of residual stresses in thin films deposited on silicon wafers by indentation fracture

T. Y. Zhang, L. Q. Chen, R. Fu

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Abstract

A semi-empirical formula is proposed to assess residual stresses in SiO2 and Cr thin films deposited on Si wafers using Vickers indentation fracture tests. The formula indicates that the ratio of the indentation load to the cubic of square root of the crack length is linearly proportional to the reciprocal of the square root of the crack length, the magnitude of the residual stress, and the film thickness. Wafer curvature measurements are conducted to calibrate the dimensionless parameters in the proposed formula. The experimental results agree well with the theoretical prediction and the residual stresses in the SiO2 and Cr thin films are evaluated to be -358 and 1095 MPa, respectively.

Original languageEnglish (US)
Pages (from-to)3869-3878
Number of pages10
JournalActa Materialia
Volume47
Issue number14
DOIs
StatePublished - Oct 19 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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