Mechanisms of interface trap buildup and annealing during elevated temperature irradiation

D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, S. T. Pantelides

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Both enhanced interface trap buildup and interface trap annealing can occur during elevated temperature irradiation (ETI), depending on the temperature, total dose, and dose rate. In this paper we describe mechanisms that govern the rate-limiting processes of interface trap buildup and annealing during ETI. Hydrogenated oxygen vacancies can facilitate hydrogen dimerization at elevated temperatures. This results in the removal of protons that can create interface traps, so degradation is suppressed. Hydrogen dimerization becomes more competitive with degradation mechanisms as the concentration of protons near the interface increases and/or as temperature increases.

Original languageEnglish (US)
Article number6072293
Pages (from-to)2930-2936
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume58
Issue number6 PART 1
DOIs
StatePublished - Dec 1 2011

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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