Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

Nicole L. Rowsey, Mark E. Law, Ronald D. Schrimpf, Daniel M. Fleetwood, Blair R. Tuttle, Sokrates T. Pantelides

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H2 concentrations (1% per volume), whereas H2 cracking dominates as H2 concentration is increased further. Electron recombination mechanisms contribute at high dose rates (> 100 rad(SiO2)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO2)/s).

Original languageEnglish (US)
Pages (from-to)3069-3076
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number6
DOIs
StatePublished - Dec 2012

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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