A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H2 concentrations (1% per volume), whereas H2 cracking dominates as H2 concentration is increased further. Electron recombination mechanisms contribute at high dose rates (> 100 rad(SiO2)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO2)/s).
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering