Abstract

Three compositions in the bismuth zinc niobate thin film capacitors were investigated. The high field dielectric properties were found similar for the two compositions, with a systematic decrease in the dielectric permittivity with increasing field strength. The same fractional tunability was available over at least a 200°C temperature range.

Original languageEnglish (US)
Pages (from-to)1941-1947
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
StatePublished - Aug 1 2003

Fingerprint

niobates
bismuth
capacitors
zinc
permittivity
thin films
dielectric properties
field strength
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Medium permittivity bismuth zinc niobate thin film capacitors",
abstract = "Three compositions in the bismuth zinc niobate thin film capacitors were investigated. The high field dielectric properties were found similar for the two compositions, with a systematic decrease in the dielectric permittivity with increasing field strength. The same fractional tunability was available over at least a 200°C temperature range.",
author = "Thayer, {R. L.} and Randall, {Clive A.} and Trolier-McKinstry, {Susan E.}",
year = "2003",
month = "8",
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language = "English (US)",
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}

Medium permittivity bismuth zinc niobate thin film capacitors. / Thayer, R. L.; Randall, Clive A.; Trolier-McKinstry, Susan E.

In: Journal of Applied Physics, Vol. 94, No. 3, 01.08.2003, p. 1941-1947.

Research output: Contribution to journalArticle

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