Memory switching in Al-Al2O3-Al thin film devices

Pierre E. Schmidt, Cruz Da ́vila, Paul Esqueda, Roberto Callarotti

Research output: Contribution to journalArticle

8 Citations (Scopus)
Original languageEnglish (US)
Number of pages1
JournalJournal of Solid State Chemistry
Volume12
Issue number3-4
DOIs
StatePublished - Jan 15 1975

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Thin film devices
Data storage equipment
thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Schmidt, Pierre E. ; Da ́vila, Cruz ; Esqueda, Paul ; Callarotti, Roberto. / Memory switching in Al-Al2O3-Al thin film devices. In: Journal of Solid State Chemistry. 1975 ; Vol. 12, No. 3-4.
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Memory switching in Al-Al2O3-Al thin film devices. / Schmidt, Pierre E.; Da ́vila, Cruz; Esqueda, Paul; Callarotti, Roberto.

In: Journal of Solid State Chemistry, Vol. 12, No. 3-4, 15.01.1975.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Da ́vila, Cruz

AU - Esqueda, Paul

AU - Callarotti, Roberto

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JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

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