Metal-induced solid-phase crystallization of hydrogenated amorphous silicon

dependence on metal type and annealing temperature

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

Original languageEnglish (US)
Pages (from-to)587-590
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume70
Issue number5
DOIs
StatePublished - May 1 2000

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Crystallization
Amorphous silicon
Metals
Annealing
Polysilicon
Temperature
Vapors
Plasmas

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature",
abstract = "We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.",
author = "Wang, {Y. Z.} and Awadelkarim, {Osama O.}",
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AU - Wang, Y. Z.

AU - Awadelkarim, Osama O.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

AB - We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

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JF - Applied Physics

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