Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

We report on metal (Cr, Ni, or Pd)-induced solid-phase crystallization (MISPC) of plasma-enhanced chemical-vapor-deposited hydrogenated amorphous silicon at annealing temperatures ≤ 600°C. MISPC is found to significantly reduce the thermal budget of crystallization at annealing temperatures as low as approx. 400°C. The lowest achievable annealing temperature is found to depend on the metal type. The metal type is also found to influence grain size and the conductivity of the polycrystalline silicon.

Original languageEnglish (US)
Pages (from-to)587-590
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume70
Issue number5
DOIs
StatePublished - May 1 2000

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature'. Together they form a unique fingerprint.

  • Cite this