Metal-insulator-semiconductor and metal-insulator-metal devices derived from zirconium phosphonate thin films

Larry J. Kepley, Debra D. Sackett, Christine M. Bell, Thomas E. Mallouk

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

Metal-insulator-semiconductor and metal-insulator-metal (MIM) structures were fabricated by layer-by-layer adsorption of zirconium alkanediylbiphosphonates, Zr(O3PCnH2nPO3), n = 2, 4, 6, 8, 10, on silicon and gold surfaces. High frequency capacitance-voltage (C-V) measurements showed accumulation and depletion regions for 5-20 layer films grown on p-type silicon. Plots of layer capacitance vs. inverse thickness were linear and gave film dielectric constants of approximately 4.0. Films of thickness 25-30 nm grown on gold surfaces were also pinhole free, as evidenced by C-V and current-voltage measurements. Anomalously high values of ε/ε0 for gold-metal phosphonate-gold MIM structures indicated that the evaporated gold top contact penetrated the insulating thin film to some extent.

Original languageEnglish (US)
Pages (from-to)132-136
Number of pages5
JournalThin Solid Films
Volume208
Issue number1
DOIs
StatePublished - Feb 10 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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