Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53 Ga0.47 As channels

Yoontae Hwang, Mark A. Wistey, Jol Cagnon, Roman Engel-Herbert, Susanne Stemmer

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Abstract

Erbium oxide dielectrics with a thickness of ∼6 nm were fabricated in situ on In0.53 Ga0.47 As channels. Leakage current and capacitance densities were characterized as a function of applied voltage using metal-oxide- semiconductor capacitors with two different top electrode materials, Pt and Al. Leakage current densities were less than 10-3 A/ cm2 at gate voltages up to ±2 V. The capacitance densities were lower with the Al electrode, which was attributed to a low-permittivity aluminum oxide layer at the electrode interface. The capacitors with the Pt electrode showed a pronounced increase in the capacitance in the depletion region at frequencies as high as 1 MHz, which was not observed for the Al electrode. Possible origins of the differences in the capacitance-voltage characteristics with Pt and Al electrodes are discussed.

Original languageEnglish (US)
Article number122907
JournalApplied Physics Letters
Volume94
Issue number12
DOIs
StatePublished - Apr 7 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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