Abstract
Erbium oxide dielectrics with a thickness of ∼6 nm were fabricated in situ on In0.53 Ga0.47 As channels. Leakage current and capacitance densities were characterized as a function of applied voltage using metal-oxide- semiconductor capacitors with two different top electrode materials, Pt and Al. Leakage current densities were less than 10-3 A/ cm2 at gate voltages up to ±2 V. The capacitance densities were lower with the Al electrode, which was attributed to a low-permittivity aluminum oxide layer at the electrode interface. The capacitors with the Pt electrode showed a pronounced increase in the capacitance in the depletion region at frequencies as high as 1 MHz, which was not observed for the Al electrode. Possible origins of the differences in the capacitance-voltage characteristics with Pt and Al electrodes are discussed.
| Original language | English (US) |
|---|---|
| Article number | 122907 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 12 |
| DOIs | |
| State | Published - Apr 7 2009 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53 Ga0.47 As channels. / Hwang, Yoontae; Wistey, Mark A.; Cagnon, Jol; Engel-Herbert, Roman; Stemmer, Susanne.
In: Applied Physics Letters, Vol. 94, No. 12, 122907, 07.04.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53 Ga0.47 As channels
AU - Hwang, Yoontae
AU - Wistey, Mark A.
AU - Cagnon, Jol
AU - Engel-Herbert, Roman
AU - Stemmer, Susanne
PY - 2009/4/7
Y1 - 2009/4/7
N2 - Erbium oxide dielectrics with a thickness of ∼6 nm were fabricated in situ on In0.53 Ga0.47 As channels. Leakage current and capacitance densities were characterized as a function of applied voltage using metal-oxide- semiconductor capacitors with two different top electrode materials, Pt and Al. Leakage current densities were less than 10-3 A/ cm2 at gate voltages up to ±2 V. The capacitance densities were lower with the Al electrode, which was attributed to a low-permittivity aluminum oxide layer at the electrode interface. The capacitors with the Pt electrode showed a pronounced increase in the capacitance in the depletion region at frequencies as high as 1 MHz, which was not observed for the Al electrode. Possible origins of the differences in the capacitance-voltage characteristics with Pt and Al electrodes are discussed.
AB - Erbium oxide dielectrics with a thickness of ∼6 nm were fabricated in situ on In0.53 Ga0.47 As channels. Leakage current and capacitance densities were characterized as a function of applied voltage using metal-oxide- semiconductor capacitors with two different top electrode materials, Pt and Al. Leakage current densities were less than 10-3 A/ cm2 at gate voltages up to ±2 V. The capacitance densities were lower with the Al electrode, which was attributed to a low-permittivity aluminum oxide layer at the electrode interface. The capacitors with the Pt electrode showed a pronounced increase in the capacitance in the depletion region at frequencies as high as 1 MHz, which was not observed for the Al electrode. Possible origins of the differences in the capacitance-voltage characteristics with Pt and Al electrodes are discussed.
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U2 - 10.1063/1.3106618
DO - 10.1063/1.3106618
M3 - Article
AN - SCOPUS:63549117403
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
M1 - 122907
ER -