Metal-semiconductor transition in armchair carbon nanotubes by symmetry breaking

Yan Li, Slava V. Rotkin, Umberto Ravaioli

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V q∼cos qθ have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.

Original languageEnglish (US)
Pages (from-to)4178-4180
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number18
DOIs
StatePublished - Nov 1 2004

Fingerprint

nanotubes
broken symmetry
carbon nanotubes
metals
perturbation
radii
symmetry
estimates
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{7c5d96667d38414b8bcc612fb7963c2a,
title = "Metal-semiconductor transition in armchair carbon nanotubes by symmetry breaking",
abstract = "The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V q∼cos qθ have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.",
author = "Yan Li and Rotkin, {Slava V.} and Umberto Ravaioli",
year = "2004",
month = "11",
day = "1",
doi = "10.1063/1.1811792",
language = "English (US)",
volume = "85",
pages = "4178--4180",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

Metal-semiconductor transition in armchair carbon nanotubes by symmetry breaking. / Li, Yan; Rotkin, Slava V.; Ravaioli, Umberto.

In: Applied Physics Letters, Vol. 85, No. 18, 01.11.2004, p. 4178-4180.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Metal-semiconductor transition in armchair carbon nanotubes by symmetry breaking

AU - Li, Yan

AU - Rotkin, Slava V.

AU - Ravaioli, Umberto

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V q∼cos qθ have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.

AB - The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V q∼cos qθ have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.

UR - http://www.scopus.com/inward/record.url?scp=10044225832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044225832&partnerID=8YFLogxK

U2 - 10.1063/1.1811792

DO - 10.1063/1.1811792

M3 - Article

AN - SCOPUS:10044225832

VL - 85

SP - 4178

EP - 4180

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -