Abstract
In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T′-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ∼ 30 cm2/(V s) at T = 300 K, which increases up to ∼350 cm2/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of >7 upon cooling to 2 K and displays a metallic T2-dependence. This suggests that the band structure of 1T′-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 8377-8384 |
| Number of pages | 8 |
| Journal | Nano letters |
| Volume | 15 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 9 2015 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2. / Pradhan, Nihar R.; McCreary, Amber; Rhodes, Daniel; Lu, Zhengguang; Feng, Simin; Manousakis, Efstratios; Smirnov, Dmitry; Namburu, Raju; Dubey, Madan; Hight Walker, Angela R.; Terrones, Humberto; Terrones Maldonado, Mauricio; Dobrosavljevic, Vladimir; Balicas, Luis.
In: Nano letters, Vol. 15, No. 12, 09.12.2015, p. 8377-8384.Research output: Contribution to journal › Article
TY - JOUR
T1 - Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2
AU - Pradhan, Nihar R.
AU - McCreary, Amber
AU - Rhodes, Daniel
AU - Lu, Zhengguang
AU - Feng, Simin
AU - Manousakis, Efstratios
AU - Smirnov, Dmitry
AU - Namburu, Raju
AU - Dubey, Madan
AU - Hight Walker, Angela R.
AU - Terrones, Humberto
AU - Terrones Maldonado, Mauricio
AU - Dobrosavljevic, Vladimir
AU - Balicas, Luis
PY - 2015/12/9
Y1 - 2015/12/9
N2 - In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T′-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ∼ 30 cm2/(V s) at T = 300 K, which increases up to ∼350 cm2/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of >7 upon cooling to 2 K and displays a metallic T2-dependence. This suggests that the band structure of 1T′-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.
AB - In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T′-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ∼ 30 cm2/(V s) at T = 300 K, which increases up to ∼350 cm2/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of >7 upon cooling to 2 K and displays a metallic T2-dependence. This suggests that the band structure of 1T′-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.
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U2 - 10.1021/acs.nanolett.5b04100
DO - 10.1021/acs.nanolett.5b04100
M3 - Article
VL - 15
SP - 8377
EP - 8384
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 12
ER -