Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2

Nihar R. Pradhan, Amber McCreary, Daniel Rhodes, Zhengguang Lu, Simin Feng, Efstratios Manousakis, Dmitry Smirnov, Raju Namburu, Madan Dubey, Angela R. Hight Walker, Humberto Terrones, Mauricio Terrones Maldonado, Vladimir Dobrosavljevic, Luis Balicas

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T′-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ∼ 30 cm2/(V s) at T = 300 K, which increases up to ∼350 cm2/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of >7 upon cooling to 2 K and displays a metallic T2-dependence. This suggests that the band structure of 1T′-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

Original languageEnglish (US)
Pages (from-to)8377-8384
Number of pages8
JournalNano letters
Volume15
Issue number12
DOIs
StatePublished - Dec 9 2015

Fingerprint

Transition metals
Phase transitions
Metals
transition metals
Electric fields
insulators
n-type semiconductors
electric fields
Ohmic contacts
Carrier mobility
Field effect transistors
carrier mobility
Optoelectronic devices
Band structure
metals
Transport properties
Electronic structure
Carrier concentration
electric contacts
Energy gap

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Pradhan, N. R., McCreary, A., Rhodes, D., Lu, Z., Feng, S., Manousakis, E., ... Balicas, L. (2015). Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2. Nano letters, 15(12), 8377-8384. https://doi.org/10.1021/acs.nanolett.5b04100
Pradhan, Nihar R. ; McCreary, Amber ; Rhodes, Daniel ; Lu, Zhengguang ; Feng, Simin ; Manousakis, Efstratios ; Smirnov, Dmitry ; Namburu, Raju ; Dubey, Madan ; Hight Walker, Angela R. ; Terrones, Humberto ; Terrones Maldonado, Mauricio ; Dobrosavljevic, Vladimir ; Balicas, Luis. / Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2. In: Nano letters. 2015 ; Vol. 15, No. 12. pp. 8377-8384.
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Pradhan, NR, McCreary, A, Rhodes, D, Lu, Z, Feng, S, Manousakis, E, Smirnov, D, Namburu, R, Dubey, M, Hight Walker, AR, Terrones, H, Terrones Maldonado, M, Dobrosavljevic, V & Balicas, L 2015, 'Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2', Nano letters, vol. 15, no. 12, pp. 8377-8384. https://doi.org/10.1021/acs.nanolett.5b04100

Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2. / Pradhan, Nihar R.; McCreary, Amber; Rhodes, Daniel; Lu, Zhengguang; Feng, Simin; Manousakis, Efstratios; Smirnov, Dmitry; Namburu, Raju; Dubey, Madan; Hight Walker, Angela R.; Terrones, Humberto; Terrones Maldonado, Mauricio; Dobrosavljevic, Vladimir; Balicas, Luis.

In: Nano letters, Vol. 15, No. 12, 09.12.2015, p. 8377-8384.

Research output: Contribution to journalArticle

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AU - Pradhan, Nihar R.

AU - McCreary, Amber

AU - Rhodes, Daniel

AU - Lu, Zhengguang

AU - Feng, Simin

AU - Manousakis, Efstratios

AU - Smirnov, Dmitry

AU - Namburu, Raju

AU - Dubey, Madan

AU - Hight Walker, Angela R.

AU - Terrones, Humberto

AU - Terrones Maldonado, Mauricio

AU - Dobrosavljevic, Vladimir

AU - Balicas, Luis

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N2 - In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T′-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μi ∼ 30 cm2/(V s) at T = 300 K, which increases up to ∼350 cm2/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of >7 upon cooling to 2 K and displays a metallic T2-dependence. This suggests that the band structure of 1T′-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

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Pradhan NR, McCreary A, Rhodes D, Lu Z, Feng S, Manousakis E et al. Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2. Nano letters. 2015 Dec 9;15(12):8377-8384. https://doi.org/10.1021/acs.nanolett.5b04100