The growth of thin Bi2Se3 films on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was investigated. A two-heater configuration was employed to pre-crack the metalorganic sources upstream of the substrate while maintaining a low substrate temperature (< 250°C). Epitaxial Bi2Se3 films with (006) X-ray rocking curve full-width-at-half-maximum values on the order of 160 arcsecs were obtained at growth rates of 6 nm/min or lower while higher growth rates resulted in polycrystalline films. The background electron concentration of the films was found to depend strongly on the substrate temperature and Se/Bi inlet ratio. Bi2Se3 films with a room temperature electron concentration of 6.7x1019 cm-3 and mobility of 155 cm2/Vs were obtained at 200°C with a Se/Bi ratio of 80. Higher substrate temperature and lower Se/Bi ratios resulted in an increase in electron concentration and corresponding reduction in mobility. The results demonstrate the potential of MOCVD for the growth of Bi2Se3 and related materials for topological insulator studies.