Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications

Joseph E. Brom, Joan Marie Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of thin Bi2Se3 films on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was investigated. A two-heater configuration was employed to pre-crack the metalorganic sources upstream of the substrate while maintaining a low substrate temperature (< 250°C). Epitaxial Bi2Se3 films with (006) X-ray rocking curve full-width-at-half-maximum values on the order of 160 arcsecs were obtained at growth rates of 6 nm/min or lower while higher growth rates resulted in polycrystalline films. The background electron concentration of the films was found to depend strongly on the substrate temperature and Se/Bi inlet ratio. Bi2Se3 films with a room temperature electron concentration of 6.7x1019 cm-3 and mobility of 155 cm2/Vs were obtained at 200°C with a Se/Bi ratio of 80. Higher substrate temperature and lower Se/Bi ratios resulted in an increase in electron concentration and corresponding reduction in mobility. The results demonstrate the potential of MOCVD for the growth of Bi2Se3 and related materials for topological insulator studies.

Original languageEnglish (US)
Title of host publicationNanoepitaxy: Materials and Devices VI
PublisherSPIE
Volume9174
ISBN (Electronic)9781628412017
DOIs
StatePublished - 2014
EventNanoepitaxy: Materials and Devices VI - San Diego, United States
Duration: Aug 19 2014Aug 21 2014

Other

OtherNanoepitaxy: Materials and Devices VI
CountryUnited States
CitySan Diego
Period8/19/148/21/14

Fingerprint

Chemical Vapor Deposition
Insulator
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Thin Films
Substrate
insulators
Thin films
Substrates
thin films
Electron
electrons
Electrons
Aluminum Oxide
Sapphire
Electron temperature
Epitaxial films
Full width at half maximum
heaters
Temperature

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Brom, Joseph E. ; Redwing, Joan Marie. / Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications. Nanoepitaxy: Materials and Devices VI. Vol. 9174 SPIE, 2014.
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abstract = "The growth of thin Bi2Se3 films on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was investigated. A two-heater configuration was employed to pre-crack the metalorganic sources upstream of the substrate while maintaining a low substrate temperature (< 250°C). Epitaxial Bi2Se3 films with (006) X-ray rocking curve full-width-at-half-maximum values on the order of 160 arcsecs were obtained at growth rates of 6 nm/min or lower while higher growth rates resulted in polycrystalline films. The background electron concentration of the films was found to depend strongly on the substrate temperature and Se/Bi inlet ratio. Bi2Se3 films with a room temperature electron concentration of 6.7x1019 cm-3 and mobility of 155 cm2/Vs were obtained at 200°C with a Se/Bi ratio of 80. Higher substrate temperature and lower Se/Bi ratios resulted in an increase in electron concentration and corresponding reduction in mobility. The results demonstrate the potential of MOCVD for the growth of Bi2Se3 and related materials for topological insulator studies.",
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Brom, JE & Redwing, JM 2014, Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications. in Nanoepitaxy: Materials and Devices VI. vol. 9174, 91740H, SPIE, Nanoepitaxy: Materials and Devices VI, San Diego, United States, 8/19/14. https://doi.org/10.1117/12.2065151

Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications. / Brom, Joseph E.; Redwing, Joan Marie.

Nanoepitaxy: Materials and Devices VI. Vol. 9174 SPIE, 2014. 91740H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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