The preparation of PZT thin films on silicon substrates by metallorganic chemical vapor deposition (MOCVD) method was discussed. The lower electrode structures compatiable with MOVCD of PZT were developed to prevent iridium silicidation and promote adhesion. The successful demonstration of high quality piezoelectric PZT by MOVCD on the lower electrode structures indicated the viability of MOVCD approach for providing a pathway to integrated piezoelectric micromachined devices.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2001|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering