A method is presented which allows the determination of density of charge induced by the potential of a metal electrode on the surface of an ultra-thin dielectric layer on a semiconductor substrate. The value of the determined charge density is a measure of ultra-thin dielectric layer surface conductivity. The proposed method can be used in conjunction with the fabrication of ultra-thin SiO//2 layers on a silicon substrate.
|Translated title of the contribution||Method for Determining the Surface Charge Density of Ultra-Thin Dielectric Layers on a Semiconductor Substrate.|
|Number of pages||3|
|Journal||Arch Elektrotech (Warsaw)|
|State||Published - Jan 1 1978|
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