Method of wet etching vias and articles formed thereby

Research output: Patent

Abstract

A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a <110> silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a <111> plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.
Original languageEnglish (US)
Patent numberUS20060118920A1
StatePublished - Jun 8 2006

Fingerprint Dive into the research topics of 'Method of wet etching vias and articles formed thereby'. Together they form a unique fingerprint.

  • Cite this