MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

O. Maksimov, P. Fisher, M. Skowronski, P. A. Salvador, M. Snyder, J. Xu, X. Weng

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2̄]MgO∥(0 0 1)[1 0 0]YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.

Original languageEnglish (US)
Pages (from-to)2760-2766
Number of pages7
JournalJournal of Crystal Growth
Volume310
Issue number11
DOIs
StatePublished - May 15 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Maksimov, O., Fisher, P., Skowronski, M., Salvador, P. A., Snyder, M., Xu, J., & Weng, X. (2008). MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy. Journal of Crystal Growth, 310(11), 2760-2766. https://doi.org/10.1016/j.jcrysgro.2008.02.013