Microbridge testing of silicon nitride thin films deposited on silicon wafers

T. Y. Zhang, Y. J. Su, C. F. Qian, M. H. Zhao, L. Q. Chen

Research output: Contribution to journalArticle

136 Scopus citations

Abstract

A novel microbridge testing method for thin films is proposed. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection vs load, considering both substrate deformation and residual stress in the film. Using the formula, one can simultaneously evaluate the Young's modulus, residual stress and bending strength of thin films from experimental load-deflection curves. The microbridge test is conducted with a load and displacement sensing nanoindenter system equipped with a microwedge probe. Samples for the microbridge test are prepared by the microelectromechanical fabrication technique such that they are easy to handle. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The present work shows that the Young's modulus, residual stress and bending strength for the annealed silicon nitride films are 202.57 ± 15.80 GPa, 291.07 ± 56.17 MPa, and 12.26 ± 1.69 GPa, respectively.

Original languageEnglish (US)
Pages (from-to)2843-2857
Number of pages15
JournalActa Materialia
Volume48
Issue number11
DOIs
StatePublished - Jun 30 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Fingerprint Dive into the research topics of 'Microbridge testing of silicon nitride thin films deposited on silicon wafers'. Together they form a unique fingerprint.

  • Cite this