Micron thick Gd2O3 films for GaN/AlGaN metal-oxide-semiconductor heterostructures

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

One micron thick Gd2O3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane textures. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance-voltage (C-V) characteristics show that the Gd2O3 device results in a negative threshold shift of approximately 1.9 V. Hysteresis of 0.9 V was extracted from the C-V curve corresponding to a trapped charge density of 6.9 × 1010 cm- 2. The conduction mechanisms were found to be dominated by Poole-Frenkel conduction between 50 and 100 °C and Schottky emission between 125 and 200 °C. The trap height for Poole-Frenkel conduction was 0.46 eV and the Schottky barrier height was 0.79 eV.

Original languageEnglish (US)
Pages (from-to)194-198
Number of pages5
JournalThin Solid Films
Volume589
DOIs
StatePublished - Aug 31 2015

Fingerprint

Thick films
metal oxide semiconductors
thick films
Heterojunctions
Metals
conduction
Capacitance
capacitance-voltage characteristics
Physical vapor deposition
Electric potential
Charge density
Film thickness
Hysteresis
crystal growth
Electron beams
film thickness
textures
Textures
Diffraction
capacitance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Micron thick Gd2O3 films for GaN/AlGaN metal-oxide-semiconductor heterostructures",
abstract = "One micron thick Gd2O3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane textures. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance-voltage (C-V) characteristics show that the Gd2O3 device results in a negative threshold shift of approximately 1.9 V. Hysteresis of 0.9 V was extracted from the C-V curve corresponding to a trapped charge density of 6.9 × 1010 cm- 2. The conduction mechanisms were found to be dominated by Poole-Frenkel conduction between 50 and 100 °C and Schottky emission between 125 and 200 °C. The trap height for Poole-Frenkel conduction was 0.46 eV and the Schottky barrier height was 0.79 eV.",
author = "Grave, {Daniel A.} and Robinson, {Joshua A.} and Wolfe, {Douglas E.}",
year = "2015",
month = "8",
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doi = "10.1016/j.tsf.2015.04.072",
language = "English (US)",
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pages = "194--198",
journal = "Thin Solid Films",
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}

Micron thick Gd2O3 films for GaN/AlGaN metal-oxide-semiconductor heterostructures. / Grave, Daniel A.; Robinson, Joshua A.; Wolfe, Douglas E.

In: Thin Solid Films, Vol. 589, 31.08.2015, p. 194-198.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Micron thick Gd2O3 films for GaN/AlGaN metal-oxide-semiconductor heterostructures

AU - Grave, Daniel A.

AU - Robinson, Joshua A.

AU - Wolfe, Douglas E.

PY - 2015/8/31

Y1 - 2015/8/31

N2 - One micron thick Gd2O3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane textures. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance-voltage (C-V) characteristics show that the Gd2O3 device results in a negative threshold shift of approximately 1.9 V. Hysteresis of 0.9 V was extracted from the C-V curve corresponding to a trapped charge density of 6.9 × 1010 cm- 2. The conduction mechanisms were found to be dominated by Poole-Frenkel conduction between 50 and 100 °C and Schottky emission between 125 and 200 °C. The trap height for Poole-Frenkel conduction was 0.46 eV and the Schottky barrier height was 0.79 eV.

AB - One micron thick Gd2O3 films were grown on GaN/AlGaN heterostructures by reactive electron beam physical vapor deposition. The films were of cubic bixbyite phase with strong (222) out-of-plane and in-plane textures. The films showed a columnar microstructure with feather-like growth. Transmission electron microscopy analysis and selected area diffraction showed highly oriented single crystal like growth near the film interface which degraded as the film thickness increased. Capacitance-voltage (C-V) characteristics show that the Gd2O3 device results in a negative threshold shift of approximately 1.9 V. Hysteresis of 0.9 V was extracted from the C-V curve corresponding to a trapped charge density of 6.9 × 1010 cm- 2. The conduction mechanisms were found to be dominated by Poole-Frenkel conduction between 50 and 100 °C and Schottky emission between 125 and 200 °C. The trap height for Poole-Frenkel conduction was 0.46 eV and the Schottky barrier height was 0.79 eV.

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