Microscopic aspects of the variations in the retention times of dynamic random access memory

Blair R. Tuttle, Roy Meade

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Abstract

The authors have examined the retention time of memory bits. Silicon dangling bond defects are shown to be consistent with retention time observations. Interactions between hydrogen and silicon dangling bond defect complexes are calculated for several model cases using first-principles density functional theory. Variable retention time is explained in terms of hydrogen interacting with a silicon dangling bond defect at the Si-Si O2 interface.

Original languageEnglish (US)
Article number202105
JournalApplied Physics Letters
Volume90
Issue number20
DOIs
StatePublished - May 28 2007

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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