Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films

A. K. Saha, B. Grisafe, S. Datta, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we theoretically and experimentally investigate the Zr concentration dependent crystal phase transition of Hf1-xZxO2 (HZO) and the corresponding evolution of dielectric (DE), ferroelectric (FE) and anti-ferroelectric (AFE) characteristics. Providing the microscopic insights of strain induced crystal phase transformations, we propose a physics based model that shows good agreement with our experimental results for 10nm Hf1-xZxO2 (with x=0 through 1). Utilizing our model, we analyze HZO-FET operation as a non-volatile memory device for different x.

Original languageEnglish (US)
Title of host publication2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT226-T227
ISBN (Electronic)9784863487178
DOIs
StatePublished - Jun 1 2019
Event39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
Duration: Jun 9 2019Jun 14 2019

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2019-June
ISSN (Print)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
CountryJapan
CityKyoto
Period6/9/196/14/19

Fingerprint

Ferroelectric materials
Phase transitions
Crystals
Field effect transistors
Physics
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Saha, A. K., Grisafe, B., Datta, S., & Gupta, S. K. (2019). Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films. In 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers (pp. T226-T227). [8776533] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2019.8776533
Saha, A. K. ; Grisafe, B. ; Datta, S. ; Gupta, Sumeet Kumar. / Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films. 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. pp. T226-T227 (Digest of Technical Papers - Symposium on VLSI Technology).
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abstract = "In this paper, we theoretically and experimentally investigate the Zr concentration dependent crystal phase transition of Hf1-xZxO2 (HZO) and the corresponding evolution of dielectric (DE), ferroelectric (FE) and anti-ferroelectric (AFE) characteristics. Providing the microscopic insights of strain induced crystal phase transformations, we propose a physics based model that shows good agreement with our experimental results for 10nm Hf1-xZxO2 (with x=0 through 1). Utilizing our model, we analyze HZO-FET operation as a non-volatile memory device for different x.",
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Saha, AK, Grisafe, B, Datta, S & Gupta, SK 2019, Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films. in 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers., 8776533, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. T226-T227, 39th Symposium on VLSI Technology, VLSI Technology 2019, Kyoto, Japan, 6/9/19. https://doi.org/10.23919/VLSIT.2019.8776533

Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films. / Saha, A. K.; Grisafe, B.; Datta, S.; Gupta, Sumeet Kumar.

2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. p. T226-T227 8776533 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Saha AK, Grisafe B, Datta S, Gupta SK. Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films. In 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2019. p. T226-T227. 8776533. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.23919/VLSIT.2019.8776533