Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films

A. K. Saha, B. Grisafe, S. Datta, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In this paper, we theoretically and experimentally investigate the Zr concentration dependent crystal phase transition of Hf1-xZxO2 (HZO) and the corresponding evolution of dielectric (DE), ferroelectric (FE) and anti-ferroelectric (AFE) characteristics. Providing the microscopic insights of strain induced crystal phase transformations, we propose a physics based model that shows good agreement with our experimental results for 10nm Hf1-xZxO2 (with x=0 through 1). Utilizing our model, we analyze HZO-FET operation as a non-volatile memory device for different x.

Original languageEnglish (US)
Title of host publication2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT226-T227
ISBN (Electronic)9784863487178
DOIs
StatePublished - Jun 1 2019
Event39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
Duration: Jun 9 2019Jun 14 2019

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2019-June
ISSN (Print)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
CountryJapan
CityKyoto
Period6/9/196/14/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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