Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance

W. M. Chen, Osama O. Awadelkarim, B. Monemar, J. L. Lindström, G. S. Oehrlein

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Abstract

We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.

Original languageEnglish (US)
Pages (from-to)3042-3045
Number of pages4
JournalPhysical Review Letters
Volume64
Issue number25
DOIs
StatePublished - Jan 1 1990

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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