TY - JOUR
T1 - Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance
AU - Chen, W. M.
AU - Awadelkarim, Osama O.
AU - Monemar, B.
AU - Lindström, J. L.
AU - Oehrlein, G. S.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.
AB - We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.
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U2 - 10.1103/PhysRevLett.64.3042
DO - 10.1103/PhysRevLett.64.3042
M3 - Article
AN - SCOPUS:4243670441
VL - 64
SP - 3042
EP - 3045
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 25
ER -