Abstract
We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3042-3045 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 64 |
| Issue number | 25 |
| DOIs | |
| State | Published - Jan 1 1990 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance. / Chen, W. M.; Awadelkarim, Osama O.; Monemar, B.; Lindström, J. L.; Oehrlein, G. S.
In: Physical Review Letters, Vol. 64, No. 25, 01.01.1990, p. 3042-3045.Research output: Contribution to journal › Article
TY - JOUR
T1 - Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance
AU - Chen, W. M.
AU - Awadelkarim, Osama O.
AU - Monemar, B.
AU - Lindström, J. L.
AU - Oehrlein, G. S.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.
AB - We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers.
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U2 - 10.1103/PhysRevLett.64.3042
DO - 10.1103/PhysRevLett.64.3042
M3 - Article
AN - SCOPUS:4243670441
VL - 64
SP - 3042
EP - 3045
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 25
ER -