Microscopic mechanisms of reactions associated with silicon MBE: A molecular dynamics investigation

Donald W. Brenner, Barbara Jane Garrison

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

A molecular dynamics simulation of the initial stages of the gas-phase epitaxy of silicon on the silicon {100{} symmetric dimer reconstructed surface has been performed. A diffusing adatom induced rearrangement of the surface reconstruction is proposed as the reaction which leads to good epitaxy. Surface diffusion is shown to play much less of a role in the reordering of the reconstruction induced by an amorphous overlayer. The results of the simulation are used to provide atomic-scale models which are consistent with experimental studies of the initial stages of silicon growth on this surface.

Original languageEnglish (US)
Pages (from-to)151-166
Number of pages16
JournalSurface Science
Volume198
Issue number1-2
DOIs
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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