Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

J. Kanicki, W. L. Warren, C. H. Seager, M. S. Crowder, P. M. Lenahan

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.

Original languageEnglish (US)
Pages (from-to)291-294
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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