Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

J. Kanicki, W. L. Warren, C. H. Seager, M. S. Crowder, Patrick M. Lenahan

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.

Original languageEnglish (US)
Pages (from-to)291-294
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
StatePublished - Jan 1 1991

Fingerprint

Dangling bonds
Amorphous silicon
Silicon nitride
silicon nitrides
amorphous silicon
Nitrogen
Lighting
illumination
nitrogen
Defects
Electrons
Photoexcitation
defects
Silicon
photoexcitation
electrons
Metals
trapping
broadband
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Kanicki, J. ; Warren, W. L. ; Seager, C. H. ; Crowder, M. S. ; Lenahan, Patrick M. / Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films. In: Journal of Non-Crystalline Solids. 1991 ; Vol. 137-138, No. PART 1. pp. 291-294.
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Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films. / Kanicki, J.; Warren, W. L.; Seager, C. H.; Crowder, M. S.; Lenahan, Patrick M.

In: Journal of Non-Crystalline Solids, Vol. 137-138, No. PART 1, 01.01.1991, p. 291-294.

Research output: Contribution to journalArticle

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