Microstructural development of SCS-6 SiC fibers during high temperature creep

Lucille A. Giannuzzi, Charles A. Lewinsohn, Charles E. Bakis, Richard E. Tressler

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400°C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from βSiC to αSiC growing at the expense of the βSiC. The SiC1 through SiC3 regions of the fiber consist of a distinct (C + βSiC) two-phase region. The grain growth of the βSiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of βSiC.

Original languageEnglish (US)
Pages (from-to)1853-1860
Number of pages8
JournalJournal of Materials Research
Volume13
Issue number7
DOIs
StatePublished - Jul 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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