During hot filament chemical vapor deposition (HFCVD), the presence of iron silicide on the surface of silicon substrates was found to enhance diamond nucleation density. Specimens were prepared by laser ablating iron onto the substrate, followed by isothermal annealing at 700°C. A high resolution transmission electron microscope showed that an amorphous diamond-like carbon (DLC) layer about 8-10 nm thick formed on the iron silicide phase during HFCVD. The DLC layer locally recrystallized which created a nucleation site for the subsequent growth of diamond. DLC will be a precursor layer for diamond growth.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry