We have investigated microstructural variations in radiation hard and soft oxides using electron spin resonance. We observe that the radiation tolerance of hard and soft oxides grown in both steam and dry oxygen is correlated with two “trivalent silicon” point defects. One “trivalent silicon” defect, the Pb center, is responsible for the radiation-induced interface states. The other center, termed E’, appears to be the hole trap.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering