Microstructural variations in radiation hard and soft oxides observed through electron spin resonance

P. M. Lenahan; P. V. Dressendorfer

doi:10.1109/TNS.1983.4333179

Microstructural variations in radiation hard and soft oxides observed through electron spin resonance

P. M. Lenahan, P. V. Dressendorfer

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Abstract

We have investigated microstructural variations in radiation hard and soft oxides using electron spin resonance. We observe that the radiation tolerance of hard and soft oxides grown in both steam and dry oxygen is correlated with two “trivalent silicon” point defects. One “trivalent silicon” defect, the Pb center, is responsible for the radiation-induced interface states. The other center, termed E’, appears to be the hole trap.

Original language	English (US)
Pages (from-to)	4602-4604
Number of pages	3
Journal	IEEE Transactions on Nuclear Science
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1983.4333179
State	Published - Dec 1983

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Microstructural variations in radiation hard and soft oxides observed through electron spin resonance",

abstract = "We have investigated microstructural variations in radiation hard and soft oxides using electron spin resonance. We observe that the radiation tolerance of hard and soft oxides grown in both steam and dry oxygen is correlated with two “trivalent silicon” point defects. One “trivalent silicon” defect, the Pb center, is responsible for the radiation-induced interface states. The other center, termed E{\textquoteright}, appears to be the hole trap.",

author = "Lenahan, {P. M.} and Dressendorfer, {P. V.}",

year = "1983",

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AU - Dressendorfer, P. V.

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AB - We have investigated microstructural variations in radiation hard and soft oxides using electron spin resonance. We observe that the radiation tolerance of hard and soft oxides grown in both steam and dry oxygen is correlated with two “trivalent silicon” point defects. One “trivalent silicon” defect, the Pb center, is responsible for the radiation-induced interface states. The other center, termed E’, appears to be the hole trap.

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Microstructural variations in radiation hard and soft oxides observed through electron spin resonance

Abstract

All Science Journal Classification (ASJC) codes

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