Microstructure and dielectric properties with CuO additions to liquid phase sintered BaTiO3 thin films

David T. Harris, Matthew J. Burch, Edward J. Mily, Elizabeth C. Dickey, Jon Paul Maria

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The refractory nature of BaTiO3 leads to limited densification and grain growth for films processed at low temperatures and a modest nonlinear dielectric response due to a marked sensitivity to physical scale and material quality. Adding liquid-forming sintering AIDS, common in bulk ceramics, to thin films enhances mass transport, leading to enhanced grain growth at lower temperatures. This work explores the effectiveness of a sputtered CuO buffer layer with BaO-B2O3 (BBO) fluxes to engineer the microstructure of BaTiO3 films. Grain size and homogeneity increase in the presence of even a ∼1 nm CuO layer. In general, grain size increases from 75 to 370 nm with an addition of 2.2% BBO and 8 nm CuO. Room temperature capacitance in fluxed films increases by a factor of 5 over pure films, and ferroelectric phase transitions are clearly observable in dielectric measurements. CuO-BBO proves effective on (0001) Al2O3 and (100) MgO substrates, although all microstructures are notably finer for the latter.

Original languageEnglish (US)
Pages (from-to)1018-1026
Number of pages9
JournalJournal of Materials Research
Issue number8
StatePublished - Apr 28 2016

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Microstructure and dielectric properties with CuO additions to liquid phase sintered BaTiO3 thin films'. Together they form a unique fingerprint.

Cite this