Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

R. E. Koritala, M. T. Lanagan, N. Chen, G. R. Bai, Y. Huang, S. K. Streiffer

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12 Scopus citations


Polycrystalline Pb(ZrxTi1-x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

Original languageEnglish (US)
Pages (from-to)1962-1971
Number of pages10
JournalJournal of Materials Research
Issue number9
StatePublished - Sep 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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