Microstructure and transport properties of epitaxial topological insulator Bi2Se3 thin films grown on MgO (100), Cr2O3 (0001), and Al2O3 (0001) templates

Y. F. Lee, R. Kumar, F. Hunte, J. Narayan, J. Schwartz

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Abstract

We report the epitaxial integration of defect-induced room temperature ferromagnetic insulators, Cr2O3 and MgO, with topological insulators Bi2Se3 on c-sapphire substrate by pulsed laser deposition. The structural, magnetic, and magnetotransport properties of ∼15nm Bi2Se3 thin films are investigated on each template. The lattice misfits of Cr2O3/Bi2Se3 and MgO/Bi2Se3 are ∼16% and ∼39%, respectively, where the critical thickness for pseudomorphic growth is less than one monolayer. The insulating behavior is more pronounced due to the additional scattering of the surface states of the Bi2Se3 layer by interfacing with MgO and Cr2O3. The weak antilocalization effect from the surface states is clearly suppressed, accounting for the presence of magnetic bottom layers. This work demonstrates an effective way to study the emergence of a ferromagnetic phase in topological insulators by the magnetic proximity effect in Bi2Se3, a step toward unveiling their exotic properties.

Original languageEnglish (US)
Article number125309
JournalJournal of Applied Physics
Volume118
Issue number12
DOIs
StatePublished - Sep 28 2015

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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