Microstructure development in lead zirconate titanate ferroelectric thin films during annealing

P. Aungkavattana, Susan E. Trolier-McKinstry

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 52/48 were prepared by a sol-gel method on platinized Si, (0001) sapphire, and (100) MgO substrates. The evolution in crystallinity was studied real time during annealing with an in-situ X-ray diffraction system using a Ruud-Barrett Position sensitive Scintillation Detector (R-B PSSD). Annealing rates of 50 °C min-1 and 100 °C min-1 were utilized to study the growth of an intermediate fluorite or pyrochlore phase and the perovskite phase. This provided direct evidence on the structure evolution during heat treatment. It is also proposed in this study that spectroscopic ellipsometry (SE) be used to examine the microstructure evolution of PZT thin films during annealing. Changes in optical properties, i.e. the refractive index, as a function of temperature can be determined. Because the refractive index depends on the crystal phase, SE can serve as an indirect means of following the crystallization. The volume fraction of the crystalline phases, the film thickness, and the presence of the surface roughness can also be obtained from SE measurements.

Original languageEnglish (US)
Pages801-804
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

Fingerprint

Ferroelectric thin films
Spectroscopic ellipsometry
Annealing
Microstructure
Refractive index
Thin films
Scintillation counters
Fluorspar
Aluminum Oxide
Crystallization
Sapphire
Perovskite
Sol-gel process
Film thickness
Volume fraction
Optical properties
Surface roughness
Heat treatment
Crystalline materials
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Aungkavattana, P., & Trolier-McKinstry, S. E. (1996). Microstructure development in lead zirconate titanate ferroelectric thin films during annealing. 801-804. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .
Aungkavattana, P. ; Trolier-McKinstry, Susan E. / Microstructure development in lead zirconate titanate ferroelectric thin films during annealing. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .4 p.
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abstract = "Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 52/48 were prepared by a sol-gel method on platinized Si, (0001) sapphire, and (100) MgO substrates. The evolution in crystallinity was studied real time during annealing with an in-situ X-ray diffraction system using a Ruud-Barrett Position sensitive Scintillation Detector (R-B PSSD). Annealing rates of 50 °C min-1 and 100 °C min-1 were utilized to study the growth of an intermediate fluorite or pyrochlore phase and the perovskite phase. This provided direct evidence on the structure evolution during heat treatment. It is also proposed in this study that spectroscopic ellipsometry (SE) be used to examine the microstructure evolution of PZT thin films during annealing. Changes in optical properties, i.e. the refractive index, as a function of temperature can be determined. Because the refractive index depends on the crystal phase, SE can serve as an indirect means of following the crystallization. The volume fraction of the crystalline phases, the film thickness, and the presence of the surface roughness can also be obtained from SE measurements.",
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Aungkavattana, P & Trolier-McKinstry, SE 1996, 'Microstructure development in lead zirconate titanate ferroelectric thin films during annealing' Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 8/18/96 - 8/21/96, pp. 801-804.

Microstructure development in lead zirconate titanate ferroelectric thin films during annealing. / Aungkavattana, P.; Trolier-McKinstry, Susan E.

1996. 801-804 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .

Research output: Contribution to conferencePaper

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N2 - Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 52/48 were prepared by a sol-gel method on platinized Si, (0001) sapphire, and (100) MgO substrates. The evolution in crystallinity was studied real time during annealing with an in-situ X-ray diffraction system using a Ruud-Barrett Position sensitive Scintillation Detector (R-B PSSD). Annealing rates of 50 °C min-1 and 100 °C min-1 were utilized to study the growth of an intermediate fluorite or pyrochlore phase and the perovskite phase. This provided direct evidence on the structure evolution during heat treatment. It is also proposed in this study that spectroscopic ellipsometry (SE) be used to examine the microstructure evolution of PZT thin films during annealing. Changes in optical properties, i.e. the refractive index, as a function of temperature can be determined. Because the refractive index depends on the crystal phase, SE can serve as an indirect means of following the crystallization. The volume fraction of the crystalline phases, the film thickness, and the presence of the surface roughness can also be obtained from SE measurements.

AB - Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 52/48 were prepared by a sol-gel method on platinized Si, (0001) sapphire, and (100) MgO substrates. The evolution in crystallinity was studied real time during annealing with an in-situ X-ray diffraction system using a Ruud-Barrett Position sensitive Scintillation Detector (R-B PSSD). Annealing rates of 50 °C min-1 and 100 °C min-1 were utilized to study the growth of an intermediate fluorite or pyrochlore phase and the perovskite phase. This provided direct evidence on the structure evolution during heat treatment. It is also proposed in this study that spectroscopic ellipsometry (SE) be used to examine the microstructure evolution of PZT thin films during annealing. Changes in optical properties, i.e. the refractive index, as a function of temperature can be determined. Because the refractive index depends on the crystal phase, SE can serve as an indirect means of following the crystallization. The volume fraction of the crystalline phases, the film thickness, and the presence of the surface roughness can also be obtained from SE measurements.

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Aungkavattana P, Trolier-McKinstry SE. Microstructure development in lead zirconate titanate ferroelectric thin films during annealing. 1996. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .