Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3

Roman Engel-Herbert, Bharat Jalan, Joël Cagnon, Susanne Stemmer

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21 Scopus citations

Abstract

The paper reports on the microstructure of rutile TiO2 films grown on r-plane sapphire surfaces by molecular beam epitaxy as a function of oxygen flux during growth. Single-phase, epitaxial rutile films were obtained for all growth conditions. X-ray diffraction and transmission electron microscopy showed that the films contained a high density of twins, likely as a result of different variants nucleating on the substrate simultaneously. At low oxygen fluxes, surface features were dominated by twin variants. With increasing oxygen flux, the surface morphology changed due to the reduced mobility of ad-atoms. The relationship between the arrangements of oxygen octahedra in the sapphire and rutile structures, the epitaxial orientation and twin formation is discussed.

Original languageEnglish (US)
Pages (from-to)149-153
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number1
DOIs
StatePublished - Dec 15 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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