Microwave characterization of thin film BST material using a simple measurement technique

Zhang Jin; Ali Tombak; Jon Paul Maria; Brian Boyette; Gregory T. Stauf; Angus I. Kingon; Amir Mortazawi

doi:10.1109/MWSYM.2002.1011868

Microwave characterization of thin film BST material using a simple measurement technique

Zhang Jin, Ali Tombak, Jon Paul Maria, Brian Boyette, Gregory T. Stauf, Angus I. Kingon, Amir Mortazawi

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Thin film barium strontium titanate (BST) in the parallel plate capacitors is characterized at microwave frequencies using a simple measurement technique. Short standards are fabricated on the same wafer as the BST capacitors to remove the parasitics of pads, lines, discontinuities and electrodes. The dielectric constant of the patterned BST thin film in the parallel plate capacitor is found to be frequency independent up to 10 GHz. The average loss tangent of BST thin film for the sample under test is approximately 0.006 and also found to be frequency independent up to 10 GHz.

Original language	English (US)
Pages (from-to)	1201-1204
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
DOIs	https://doi.org/10.1109/MWSYM.2002.1011868
State	Published - Jan 1 2002

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/MWSYM.2002.1011868

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abstract = "Thin film barium strontium titanate (BST) in the parallel plate capacitors is characterized at microwave frequencies using a simple measurement technique. Short standards are fabricated on the same wafer as the BST capacitors to remove the parasitics of pads, lines, discontinuities and electrodes. The dielectric constant of the patterned BST thin film in the parallel plate capacitor is found to be frequency independent up to 10 GHz. The average loss tangent of BST thin film for the sample under test is approximately 0.006 and also found to be frequency independent up to 10 GHz.",

author = "Zhang Jin and Ali Tombak and Maria, {Jon Paul} and Brian Boyette and Stauf, {Gregory T.} and Kingon, {Angus I.} and Amir Mortazawi",

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AU - Jin, Zhang

AU - Tombak, Ali

AU - Maria, Jon Paul

AU - Boyette, Brian

AU - Stauf, Gregory T.

AU - Kingon, Angus I.

AU - Mortazawi, Amir

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Thin film barium strontium titanate (BST) in the parallel plate capacitors is characterized at microwave frequencies using a simple measurement technique. Short standards are fabricated on the same wafer as the BST capacitors to remove the parasitics of pads, lines, discontinuities and electrodes. The dielectric constant of the patterned BST thin film in the parallel plate capacitor is found to be frequency independent up to 10 GHz. The average loss tangent of BST thin film for the sample under test is approximately 0.006 and also found to be frequency independent up to 10 GHz.

AB - Thin film barium strontium titanate (BST) in the parallel plate capacitors is characterized at microwave frequencies using a simple measurement technique. Short standards are fabricated on the same wafer as the BST capacitors to remove the parasitics of pads, lines, discontinuities and electrodes. The dielectric constant of the patterned BST thin film in the parallel plate capacitor is found to be frequency independent up to 10 GHz. The average loss tangent of BST thin film for the sample under test is approximately 0.006 and also found to be frequency independent up to 10 GHz.

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JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

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ER -

Microwave characterization of thin film BST material using a simple measurement technique

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