Thin film barium strontium titanate (BST) in the parallel plate capacitors is characterized at microwave frequencies using a simple measurement technique. Short standards are fabricated on the same wafer as the BST capacitors to remove the parasitics of pads, lines, discontinuities and electrodes. The dielectric constant of the patterned BST thin film in the parallel plate capacitor is found to be frequency independent up to 10 GHz. The average loss tangent of BST thin film for the sample under test is approximately 0.006 and also found to be frequency independent up to 10 GHz.
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|Publication status||Published - Jan 1 2002|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering