Microwave dissipation spectra in arrays of silicon nanowires

Mark Lee; Clark Highstrete; Aaron Vallett; Sarah M. Dilts; Joan Marie Redwing; Theresa S. Mayer

doi:10.1109/MWSYM.2007.380071

Microwave dissipation spectra in arrays of silicon nanowires

Mark Lee, Clark Highstrete, Aaron Vallett, Sarah M. Dilts, Joan Marie Redwing, Theresa S. Mayer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The transmission and reflection scattering parameters of arrays of silicon nanowires (SiNWs) directly assembled onto co-planar waveguides (CPWs) have been measured from 0.1 to 50 GHz at room temperature. Typical arrays consisted of between 10³ to 10⁴ SiNWs aligned parallel to the electric field polarization of the propagating microwave field. Scattering parameters were measured on CPWs both before and after nanomaterial assembly. Highly reproducible CPW characteristics and careful use of control samples to quantify systematic reproducibility allowed clear separation of nanomaterial effects from the characteristics of the bare CPWs. Arrays of n doped SiNWs consistently showed frequencydependent power dissipation. Nominally undoped SiNW arrays, however, showed no measurable microwave power dissipation up to 50 GHz.

Original language	English (US)
Title of host publication	2007 IEEE MTT-S International Microwave Symposium Digest
Pages	1765-1767
Number of pages	3
DOIs	https://doi.org/10.1109/MWSYM.2007.380071
State	Published - Oct 2 2007
Event	2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States Duration: Jun 3 2007 → Jun 8 2007

Other

Other	2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/Territory	United States
City	Honolulu, HI
Period	6/3/07 → 6/8/07

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/MWSYM.2007.380071

Cite this

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title = "Microwave dissipation spectra in arrays of silicon nanowires",

abstract = "The transmission and reflection scattering parameters of arrays of silicon nanowires (SiNWs) directly assembled onto co-planar waveguides (CPWs) have been measured from 0.1 to 50 GHz at room temperature. Typical arrays consisted of between 103 to 104 SiNWs aligned parallel to the electric field polarization of the propagating microwave field. Scattering parameters were measured on CPWs both before and after nanomaterial assembly. Highly reproducible CPW characteristics and careful use of control samples to quantify systematic reproducibility allowed clear separation of nanomaterial effects from the characteristics of the bare CPWs. Arrays of n doped SiNWs consistently showed frequencydependent power dissipation. Nominally undoped SiNW arrays, however, showed no measurable microwave power dissipation up to 50 GHz.",

author = "Mark Lee and Clark Highstrete and Aaron Vallett and Dilts, {Sarah M.} and Redwing, {Joan Marie} and Mayer, {Theresa S.}",

year = "2007",

month = oct,

day = "2",

doi = "10.1109/MWSYM.2007.380071",

language = "English (US)",

isbn = "1424406889",

pages = "1765--1767",

booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",

note = "2007 IEEE MTT-S International Microwave Symposium, IMS 2007 ; Conference date: 03-06-2007 Through 08-06-2007",

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TY - GEN

T1 - Microwave dissipation spectra in arrays of silicon nanowires

AU - Lee, Mark

AU - Highstrete, Clark

AU - Vallett, Aaron

AU - Dilts, Sarah M.

AU - Redwing, Joan Marie

AU - Mayer, Theresa S.

PY - 2007/10/2

Y1 - 2007/10/2

N2 - The transmission and reflection scattering parameters of arrays of silicon nanowires (SiNWs) directly assembled onto co-planar waveguides (CPWs) have been measured from 0.1 to 50 GHz at room temperature. Typical arrays consisted of between 103 to 104 SiNWs aligned parallel to the electric field polarization of the propagating microwave field. Scattering parameters were measured on CPWs both before and after nanomaterial assembly. Highly reproducible CPW characteristics and careful use of control samples to quantify systematic reproducibility allowed clear separation of nanomaterial effects from the characteristics of the bare CPWs. Arrays of n doped SiNWs consistently showed frequencydependent power dissipation. Nominally undoped SiNW arrays, however, showed no measurable microwave power dissipation up to 50 GHz.

AB - The transmission and reflection scattering parameters of arrays of silicon nanowires (SiNWs) directly assembled onto co-planar waveguides (CPWs) have been measured from 0.1 to 50 GHz at room temperature. Typical arrays consisted of between 103 to 104 SiNWs aligned parallel to the electric field polarization of the propagating microwave field. Scattering parameters were measured on CPWs both before and after nanomaterial assembly. Highly reproducible CPW characteristics and careful use of control samples to quantify systematic reproducibility allowed clear separation of nanomaterial effects from the characteristics of the bare CPWs. Arrays of n doped SiNWs consistently showed frequencydependent power dissipation. Nominally undoped SiNW arrays, however, showed no measurable microwave power dissipation up to 50 GHz.

UR - http://www.scopus.com/inward/record.url?scp=34748866010&partnerID=8YFLogxK

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U2 - 10.1109/MWSYM.2007.380071

DO - 10.1109/MWSYM.2007.380071

M3 - Conference contribution

AN - SCOPUS:34748866010

SN - 1424406889

SN - 9781424406883

SP - 1765

EP - 1767

BT - 2007 IEEE MTT-S International Microwave Symposium Digest

T2 - 2007 IEEE MTT-S International Microwave Symposium, IMS 2007

Y2 - 3 June 2007 through 8 June 2007

ER -

Microwave dissipation spectra in arrays of silicon nanowires

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