Microwave noise performance of AlGaN/GaN HEMTs

A. T. Ping, E. Piner, Joan Marie Redwing, M. Asif Khan, I. Adesida

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The authors have characterized the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 μm gate-length devices was measured to be 0.77dB at 5 GHz and 1.06dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.

Original languageEnglish (US)
Pages (from-to)175-176
Number of pages2
JournalElectronics Letters
Issue number2
StatePublished - Jan 20 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Ping, A. T., Piner, E., Redwing, J. M., Asif Khan, M., & Adesida, I. (2000). Microwave noise performance of AlGaN/GaN HEMTs. Electronics Letters, 36(2), 175-176. https://doi.org/10.1049/el:20000152