Microwave properties and strain-induced lattice defects of c-axis-oriented YBa2Cu3O7-δ thin films on silicon

C. Jaekel, G. Kyas, H. G. Roskos, H. Kurz, Bernd C. Kabius, D. Meertens, W. Prusseit, B. Utz

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Abstract

The microwave properties and the crystal structure of YBa2CU3O7-δ thin films are examined as a function of film thickness. Already below the critical thickness for the formation of macroscopic fractures, we observe an increase of the residual surface resistance with thickness. Cross-sectional transmission electron microscopy reveals that this behavior is caused by structural changes of antiphase boundaries leading to normal-conducting regions between superconducting grains. The surface resistance is calculated within the weak-link picture.

Original languageEnglish (US)
Pages (from-to)3488-3492
Number of pages5
JournalJournal of Applied Physics
Volume80
Issue number6
DOIs
StatePublished - Sep 15 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Jaekel, C., Kyas, G., Roskos, H. G., Kurz, H., Kabius, B. C., Meertens, D., Prusseit, W., & Utz, B. (1996). Microwave properties and strain-induced lattice defects of c-axis-oriented YBa2Cu3O7-δ thin films on silicon. Journal of Applied Physics, 80(6), 3488-3492. https://doi.org/10.1063/1.363220