Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

Binbin Weng, Jiangang Ma, Lai Wei, Jian Xu, Gang Bi, Zhisheng Shi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.

Original languageEnglish (US)
Article number231103
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
StatePublished - Dec 6 2010

Fingerprint

emitters
photonics
silicon
crystals
optical pumping
crystal defects
light emission
quantum efficiency
molecular beam epitaxy
quantum wells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Weng, Binbin ; Ma, Jiangang ; Wei, Lai ; Xu, Jian ; Bi, Gang ; Shi, Zhisheng. / Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon. In: Applied Physics Letters. 2010 ; Vol. 97, No. 23.
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Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon. / Weng, Binbin; Ma, Jiangang; Wei, Lai; Xu, Jian; Bi, Gang; Shi, Zhisheng.

In: Applied Physics Letters, Vol. 97, No. 23, 231103, 06.12.2010.

Research output: Contribution to journalArticle

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