Abstract
We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.
| Original language | English (US) |
|---|---|
| Article number | 231103 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 23 |
| DOIs | |
| State | Published - Dec 6 2010 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon. / Weng, Binbin; Ma, Jiangang; Wei, Lai; Xu, Jian; Bi, Gang; Shi, Zhisheng.
In: Applied Physics Letters, Vol. 97, No. 23, 231103, 06.12.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon
AU - Weng, Binbin
AU - Ma, Jiangang
AU - Wei, Lai
AU - Xu, Jian
AU - Bi, Gang
AU - Shi, Zhisheng
PY - 2010/12/6
Y1 - 2010/12/6
N2 - We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.
AB - We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.
UR - http://www.scopus.com/inward/record.url?scp=78650380680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650380680&partnerID=8YFLogxK
U2 - 10.1063/1.3524239
DO - 10.1063/1.3524239
M3 - Article
AN - SCOPUS:78650380680
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
M1 - 231103
ER -