Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

Binbin Weng; Jiangang Ma; Lai Wei; Jian Xu; Gang Bi; Zhisheng Shi

doi:10.1063/1.3524239

Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

Binbin Weng, Jiangang Ma, Lai Wei, Jian Xu, Gang Bi, Zhisheng Shi

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.

Original language	English (US)
Article number	231103
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3524239
State	Published - Dec 6 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3524239

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abstract = "We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.",

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T1 - Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

AU - Weng, Binbin

AU - Ma, Jiangang

AU - Wei, Lai

AU - Xu, Jian

AU - Bi, Gang

AU - Shi, Zhisheng

PY - 2010/12/6

Y1 - 2010/12/6

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AB - We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.

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