Mid-infrared surface-emitting photonic crystal microcavity light emitter on silicon

Binbin Weng, Jiangang Ma, Lai Wei, Jian Xu, Gang Bi, Zhisheng Shi

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Abstract

We describe an IV-VI semiconductor light emitter consisting of a PbSe/PbSrSe multiple quantum well active region grown by molecular beam epitaxy on a patterned Si(111) substrate with a two dimensional (2D) photonic crystal (PC) array. The 2D PC array was designed to form photonic band gaps around 1960 and 2300 cm-1. Under pulsed optical pumping, light emission was observed with strongly coupled PC defect modes, which correspond well with simulated photonic band gaps. The observed spectral linewidth was around 10 cm-1 and the highest quantum efficiency measured was 12.8%.

Original languageEnglish (US)
Article number231103
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - Dec 6 2010

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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