Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

Edward Sachet, Mark D. Losego, Joshua Guske, Stefan Franzen, Jon-Paul Maria

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Abstract

Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 × 1019 to 8 × 10 19 cm-3 carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.

Original languageEnglish (US)
Article number051111
JournalApplied Physics Letters
Volume102
Issue number5
DOIs
StatePublished - Feb 4 2013

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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