Misfit strain-misfit strain diagram of epitaxial BaTiO3 thin films: Thermodynamic calculations and phase-field simulations

G. Sheng, J. X. Zhang, Y. L. Li, S. Choudhury, Q. X. Jia, Z. K. Liu, L. Q. Chen

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The effect of anisotropic strains on the phase transitions and domains structures of BaTiO3 thin films was studied using both thermodynamic calculations and phase-field simulations. The misfit strain-misfit strain domain stability diagrams were predicted. The similarity and significant differences between the diagrams from thermodynamic calculations assuming single domains and from phase-field simulations were analyzed. Typical domain structures as a result of anisotropic misfit strains are presented.

Original languageEnglish (US)
Article number232904
JournalApplied Physics Letters
Volume93
Issue number23
DOIs
StatePublished - Dec 19 2008

Fingerprint

diagrams
thermodynamics
thin films
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{22c1ddb85ad84fa9ba6d6a3316aa80af,
title = "Misfit strain-misfit strain diagram of epitaxial BaTiO3 thin films: Thermodynamic calculations and phase-field simulations",
abstract = "The effect of anisotropic strains on the phase transitions and domains structures of BaTiO3 thin films was studied using both thermodynamic calculations and phase-field simulations. The misfit strain-misfit strain domain stability diagrams were predicted. The similarity and significant differences between the diagrams from thermodynamic calculations assuming single domains and from phase-field simulations were analyzed. Typical domain structures as a result of anisotropic misfit strains are presented.",
author = "G. Sheng and Zhang, {J. X.} and Li, {Y. L.} and S. Choudhury and Jia, {Q. X.} and Liu, {Z. K.} and Chen, {L. Q.}",
year = "2008",
month = "12",
day = "19",
doi = "10.1063/1.3039410",
language = "English (US)",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

Misfit strain-misfit strain diagram of epitaxial BaTiO3 thin films : Thermodynamic calculations and phase-field simulations. / Sheng, G.; Zhang, J. X.; Li, Y. L.; Choudhury, S.; Jia, Q. X.; Liu, Z. K.; Chen, L. Q.

In: Applied Physics Letters, Vol. 93, No. 23, 232904, 19.12.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Misfit strain-misfit strain diagram of epitaxial BaTiO3 thin films

T2 - Thermodynamic calculations and phase-field simulations

AU - Sheng, G.

AU - Zhang, J. X.

AU - Li, Y. L.

AU - Choudhury, S.

AU - Jia, Q. X.

AU - Liu, Z. K.

AU - Chen, L. Q.

PY - 2008/12/19

Y1 - 2008/12/19

N2 - The effect of anisotropic strains on the phase transitions and domains structures of BaTiO3 thin films was studied using both thermodynamic calculations and phase-field simulations. The misfit strain-misfit strain domain stability diagrams were predicted. The similarity and significant differences between the diagrams from thermodynamic calculations assuming single domains and from phase-field simulations were analyzed. Typical domain structures as a result of anisotropic misfit strains are presented.

AB - The effect of anisotropic strains on the phase transitions and domains structures of BaTiO3 thin films was studied using both thermodynamic calculations and phase-field simulations. The misfit strain-misfit strain domain stability diagrams were predicted. The similarity and significant differences between the diagrams from thermodynamic calculations assuming single domains and from phase-field simulations were analyzed. Typical domain structures as a result of anisotropic misfit strains are presented.

UR - http://www.scopus.com/inward/record.url?scp=57649133941&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649133941&partnerID=8YFLogxK

U2 - 10.1063/1.3039410

DO - 10.1063/1.3039410

M3 - Article

AN - SCOPUS:57649133941

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 232904

ER -