In this article, we analyze the impact of process variations of the ferroelectric film on the performance of the negative capacitance field-effect transistor (NCFET). Variations of the ferroelectric layer area (resulting from the variation of the transistor dimension sizes and the edge-effect), the ferroelectric layer thickness, the polarization, and the coercivity are taken into consideration to evaluate the impact on the NCFET performance. These results can serve as a guideline to improve both the circuit performance and yield for analog and digital circuits. To showcase this ability, the influence of these variations on the oscillating frequency of a five-stage ring oscillator and the mirroring current of a current mirror are analyzed. The results show that the distribution of the standard derivation of the oscillating frequency is 1.9 MHz on condition of TFE = 14 nm, WP/LP =1 μm/45 nm, and WN/LN=500/45 nm, and the standard derivation of the mirroring current is 0.17 μA on condition of W = 1 μm, L = 500 nm, and TFE = 20 nm.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering