TY - JOUR
T1 - Mismatch of Ferroelectric Film on Negative Capacitance FETs Performance
AU - Liang, Yuhua
AU - Zhu, Zhangming
AU - Li, Xueqing
AU - Gupta, Sumeet Kumar
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
N1 - Funding Information:
Manuscript received December 19, 2019; revised January 14, 2020; accepted January 14, 2020. Date of publication February 11, 2020; date of current version February 26, 2020. This work was supported in part by the National Science Foundation of China under Grant 61604111, in part by the Fundamental Research Funds for the Central Universities under Grant JBX171104, in part by the Beijing Innovation Center for Future Chips, and in part by the Center Research on Intelligent Storage and Processing-in-memory. The review of this article was arranged by Editor B. K. Kaushik. (Corresponding authors: Zhangming Zhu; Vijaykrishnan Narayanan.) Yuhua Liang and Zhangming Zhu are with the Shaanxi Key Laboratory of Integrated Circuits and Systems, School of Microelectronics, Xidian University, Xi’an 710071, China (e-mail: yhliang@xidian.edu.cn; zmyh@263.net).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/3
Y1 - 2020/3
N2 - In this article, we analyze the impact of process variations of the ferroelectric film on the performance of the negative capacitance field-effect transistor (NCFET). Variations of the ferroelectric layer area (resulting from the variation of the transistor dimension sizes and the edge-effect), the ferroelectric layer thickness, the polarization, and the coercivity are taken into consideration to evaluate the impact on the NCFET performance. These results can serve as a guideline to improve both the circuit performance and yield for analog and digital circuits. To showcase this ability, the influence of these variations on the oscillating frequency of a five-stage ring oscillator and the mirroring current of a current mirror are analyzed. The results show that the distribution of the standard derivation of the oscillating frequency is 1.9 MHz on condition of TFE = 14 nm, WP/LP =1 μm/45 nm, and WN/LN=500/45 nm, and the standard derivation of the mirroring current is 0.17 μA on condition of W = 1 μm, L = 500 nm, and TFE = 20 nm.
AB - In this article, we analyze the impact of process variations of the ferroelectric film on the performance of the negative capacitance field-effect transistor (NCFET). Variations of the ferroelectric layer area (resulting from the variation of the transistor dimension sizes and the edge-effect), the ferroelectric layer thickness, the polarization, and the coercivity are taken into consideration to evaluate the impact on the NCFET performance. These results can serve as a guideline to improve both the circuit performance and yield for analog and digital circuits. To showcase this ability, the influence of these variations on the oscillating frequency of a five-stage ring oscillator and the mirroring current of a current mirror are analyzed. The results show that the distribution of the standard derivation of the oscillating frequency is 1.9 MHz on condition of TFE = 14 nm, WP/LP =1 μm/45 nm, and WN/LN=500/45 nm, and the standard derivation of the mirroring current is 0.17 μA on condition of W = 1 μm, L = 500 nm, and TFE = 20 nm.
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U2 - 10.1109/TED.2020.2968050
DO - 10.1109/TED.2020.2968050
M3 - Article
AN - SCOPUS:85080865597
SN - 0018-9383
VL - 67
SP - 1297
EP - 1304
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
M1 - 8994073
ER -