The liquid source misted chemical deposition (LSMCD) method was employed in the preparation of lead zirconate titanate, Pb(Zr0.52Ti 0.48)O3 (PZT) thin films. The desired thickness of the films was adjusted by a number of successive deposition/heating cycles. Typically, a 500-nm-thick film was achieved by running four processing cycles. The PZT films showed good phase purity with a (111)-preferred crystallographic orientation. The capacitance voltage (C-V) and polarization electric field (P-E) hysteresis curves displayed normal ferroelectric behavior of LSMCD-derived films with asymmetric switching. The dielectric and ferroelectric properties were comparable with the properties of thin films prepared by other techniques.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics