Mist deposition for TFT technology

K. Shanmugasundaram; S. C. Price; K. Chang; D. O. Lee; J. Ruzyllo

doi:10.1149/1.2356361

Mist deposition for TFT technology

K. Shanmugasundaram, S. C. Price, K. Chang, D. O. Lee, J. Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In this work the process of mist deposition is explored as a method used to deposit organic semiconductors and gate dielectrics for TFTs. With an expanding use of TFTs in both electronic and photonic applications mist deposition offers advantages in terms of versatility, throughput and process cost. The method of mist deposition is first introduced and then example of results obtained with mist deposited dielectric and semiconductors thin films are discussed. copyright The Electrochemical Society.

Original language	English (US)
Pages (from-to)	255-259
Number of pages	5
Journal	ECS Transactions
Volume	3
Issue number	8
DOIs	https://doi.org/10.1149/1.2356361
State	Published - Dec 1 2006
Event	Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/1.2356361

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title = "Mist deposition for TFT technology",

abstract = "In this work the process of mist deposition is explored as a method used to deposit organic semiconductors and gate dielectrics for TFTs. With an expanding use of TFTs in both electronic and photonic applications mist deposition offers advantages in terms of versatility, throughput and process cost. The method of mist deposition is first introduced and then example of results obtained with mist deposited dielectric and semiconductors thin films are discussed. copyright The Electrochemical Society.",

author = "K. Shanmugasundaram and Price, {S. C.} and K. Chang and Lee, {D. O.} and J. Ruzyllo",

year = "2006",

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note = "Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

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AU - Shanmugasundaram, K.

AU - Price, S. C.

AU - Chang, K.

AU - Lee, D. O.

AU - Ruzyllo, J.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this work the process of mist deposition is explored as a method used to deposit organic semiconductors and gate dielectrics for TFTs. With an expanding use of TFTs in both electronic and photonic applications mist deposition offers advantages in terms of versatility, throughput and process cost. The method of mist deposition is first introduced and then example of results obtained with mist deposited dielectric and semiconductors thin films are discussed. copyright The Electrochemical Society.

AB - In this work the process of mist deposition is explored as a method used to deposit organic semiconductors and gate dielectrics for TFTs. With an expanding use of TFTs in both electronic and photonic applications mist deposition offers advantages in terms of versatility, throughput and process cost. The method of mist deposition is first introduced and then example of results obtained with mist deposited dielectric and semiconductors thin films are discussed. copyright The Electrochemical Society.

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DO - 10.1149/1.2356361

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EP - 259

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JF - ECS Transactions

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IS - 8

T2 - Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Mist deposition for TFT technology

Abstract

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