Mist deposition of organic semiconductors for light emitting diodes

K. Shanmugasundaram, S. C. Price, W. Li, H. Jiang, Q. K. Wang, J. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work the process of mist deposition is explored as a method used to deposit organic semiconductors for applications in OLEDs. The deposition kinetics of a specially formulated hole transport agent (AG 1) from Agiltron were studied. The results indicate that the mist deposited film thickness varies linearly with precursor concentration, deposition time, and substrate potential. AFM characterization shows distinct stages in the film evolution process. The growth of secondary layers was observed before the formation of a complete initial film layer. A working blue OLED with the hole transport and photo emissive layers deposited by mist deposition was demonstrated.

Original languageEnglish (US)
Title of host publicationECS Transactions - Organic Semiconductor Materials and Devices
Pages73-79
Number of pages7
Edition25
DOIs
StatePublished - Dec 24 2008
EventOrganic Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Publication series

NameECS Transactions
Number25
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherOrganic Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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