Mist deposition of thin photoresist films

William Mahoney, Paul Roman, Paul Mumbauer, Jerzy Ruzyllo

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

This experiment is concerned with the development of mist deposition technology as an alternative to spin-on method of photoresist deposition in microelectronic manufacturing. A commercial 200 mm mist deposition tool is used in this study. The results obtained demonstrate effectiveness of mist deposition in resist processing. Basic parameters of resist mist deposition are determined. Deposition rate can be controlled within 10 to 50 nm/min range. Using a stepper and UV-5 photoresist 250 nm patterns were readily defined in 120 nm thick mist deposited resist. It is postulated that mist deposition offers advantages over spin-on process in the case of very thin resist technology as well as in the case of resist deposition on large, non-circular substrates.

Original languageEnglish (US)
Pages (from-to)861-866
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5376
Issue numberPART 2
DOIs
StatePublished - Aug 18 2004

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mist
Photoresist
Fog
Photoresists
photoresists
Resist
Deposition rates
Microelectronics
microelectronics
manufacturing
Manufacturing
Substrate
Substrates
Processing
Alternatives

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Mahoney, William ; Roman, Paul ; Mumbauer, Paul ; Ruzyllo, Jerzy. / Mist deposition of thin photoresist films. In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5376, No. PART 2. pp. 861-866.
@article{831702cfa941465889be48b87b023cb3,
title = "Mist deposition of thin photoresist films",
abstract = "This experiment is concerned with the development of mist deposition technology as an alternative to spin-on method of photoresist deposition in microelectronic manufacturing. A commercial 200 mm mist deposition tool is used in this study. The results obtained demonstrate effectiveness of mist deposition in resist processing. Basic parameters of resist mist deposition are determined. Deposition rate can be controlled within 10 to 50 nm/min range. Using a stepper and UV-5 photoresist 250 nm patterns were readily defined in 120 nm thick mist deposited resist. It is postulated that mist deposition offers advantages over spin-on process in the case of very thin resist technology as well as in the case of resist deposition on large, non-circular substrates.",
author = "William Mahoney and Paul Roman and Paul Mumbauer and Jerzy Ruzyllo",
year = "2004",
month = "8",
day = "18",
doi = "10.1117/12.534149",
language = "English (US)",
volume = "5376",
pages = "861--866",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",
number = "PART 2",

}

Mist deposition of thin photoresist films. / Mahoney, William; Roman, Paul; Mumbauer, Paul; Ruzyllo, Jerzy.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5376, No. PART 2, 18.08.2004, p. 861-866.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Mist deposition of thin photoresist films

AU - Mahoney, William

AU - Roman, Paul

AU - Mumbauer, Paul

AU - Ruzyllo, Jerzy

PY - 2004/8/18

Y1 - 2004/8/18

N2 - This experiment is concerned with the development of mist deposition technology as an alternative to spin-on method of photoresist deposition in microelectronic manufacturing. A commercial 200 mm mist deposition tool is used in this study. The results obtained demonstrate effectiveness of mist deposition in resist processing. Basic parameters of resist mist deposition are determined. Deposition rate can be controlled within 10 to 50 nm/min range. Using a stepper and UV-5 photoresist 250 nm patterns were readily defined in 120 nm thick mist deposited resist. It is postulated that mist deposition offers advantages over spin-on process in the case of very thin resist technology as well as in the case of resist deposition on large, non-circular substrates.

AB - This experiment is concerned with the development of mist deposition technology as an alternative to spin-on method of photoresist deposition in microelectronic manufacturing. A commercial 200 mm mist deposition tool is used in this study. The results obtained demonstrate effectiveness of mist deposition in resist processing. Basic parameters of resist mist deposition are determined. Deposition rate can be controlled within 10 to 50 nm/min range. Using a stepper and UV-5 photoresist 250 nm patterns were readily defined in 120 nm thick mist deposited resist. It is postulated that mist deposition offers advantages over spin-on process in the case of very thin resist technology as well as in the case of resist deposition on large, non-circular substrates.

UR - http://www.scopus.com/inward/record.url?scp=3843114380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3843114380&partnerID=8YFLogxK

U2 - 10.1117/12.534149

DO - 10.1117/12.534149

M3 - Conference article

VL - 5376

SP - 861

EP - 866

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

IS - PART 2

ER -